Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT-Reference-Cited by-同舟云学术

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Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT

Published:2008-06 Issue: Volume: Page:
ISSN:
Container-title:2008 Symposium on VLSI Technology
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Author:

Huang J.,Kirsch P. D.,Oh J.,Lee S.H.,Price J.,Majhi P.,Harris H.R.,Gilmer D. C.,Kelly D. Q.,Sivasubramani P.,Bersuker G.,Heh D.,Young C.,Park C.S.,Tan Y. N.,Goel N.,Park C.,Hung P.Y.,Lysaght P.,Choi K. J.,Cho B. J.,Tseng H.-H.,Lee B. H.,Jammy R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4573020/4588540/04588571.pdf?arnumber=4588571

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers;Bulletin of Materials Science;2022-02-20

2. Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂;IEEE Journal of the Electron Devices Society;2022

3. Improvement in electrical properties of high- κ film on Ge substrate by an improved stress relieved pre-oxide method;Chinese Physics B;2016-02

4. Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack;Solid-State Electronics;2012-12

5. Enhanced Hole Mobility and Low $Tinv$ for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel;IEEE Electron Device Letters;2012-02

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