Enhanced Hole Mobility and Low $Tinv$ for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel-Reference-Cited by-同舟云学术

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Enhanced Hole Mobility and Low $Tinv$ for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel

Published:2012-02 Issue:2 Volume:33 Page:188-190
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Fu Chung-Hao,Chang-Liao Kuei-Shu,Liu Li-Jung,Hsieh Hsiao-Chi,Lu Chun-Chang,Li Chen-Chien,Wang Tien-Ko,Heh Da-Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6138595/06121896.pdf?arnumber=6121896

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment;IEEE Electron Device Letters;2020-04

3. Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: dielectrics screening, interface engineering and electrical properties;Journal of Physics D: Applied Physics;2019-09-26

4. Radiation effects and reliability characteristics of Ge pMOSFETs;Microelectronic Engineering;2019-08

5. Effects of fluorine based double plasma treatment on electrical and reliability characteristics of Ge pMOSFETs;Microelectronic Engineering;2019-07

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