Enhanced zirconia oxide dielectric quality of germanium p-channel metal oxide semiconductor field effect transistor by in-situ low temperature treatment in atomic layer deposition process-Reference-Cited by-同舟云学术

Enhanced zirconia oxide dielectric quality of germanium p-channel metal oxide semiconductor field effect transistor by in-situ low temperature treatment in atomic layer deposition process

Published:2020-05 Issue: Volume:701 Page:137965
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ruan Dun-Bao^ORCID,Chang-Liao Kuei-Shu^ORCID,Li Ji-Syuan,Yi Shih-Han

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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4. Enhanced hole mobility and low Tinv for pMOSFET by a novel epitaxial Si/Ge superlattice channel;Fu;IEEE Electron Device Lett.,2012

5. Ge (100) and (111) N- and P-FETs with high mobility and low-T mobility characterization;Kuzum;IEEE Trans. Electron Devices,2009

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