Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates-Reference-Cited by-同舟云学术

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Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 Symposium on VLSI Technology (VLSI Technology)
language:
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Author:

Czornomaz L.,Uccelli E.,Sousa M.,Deshpande V.,Djara V.,Caimi D.,Rossell M. D.,Erni R.,Fompeyrine J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7198535/7223619/07223666.pdf?arnumber=7223666

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5. Waveguide coupled III-V photodiodes monolithically integrated on Si;Nature Communications;2022-02-17

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