III-V on a Si platform for the next generations of communication systems-Reference-Cited by-同舟云学术

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III-V on a Si platform for the next generations of communication systems

Published:2022-03-06 Issue: Volume: Page:
ISSN:
Container-title:2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Parvais B.¹,Vais A.¹,Yadav S.¹,Mols Y.¹,Vermeersch B.¹,Kodanarama K. Vondkar¹,Boccardi G.¹,Kunert B.¹,Collaert N.¹

Affiliation:

1. Imec,Leuven,Belgium,3001

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9797886/9797892/09798159.pdf?arnumber=9798159

Reference18 articles.

1. First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules

2. Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration

3. 20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon

4. Engineered substrate as a fast track to technology performance

5. An alternative approach to efficient simulation of micro/nanoscale phonon transport

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications;IEEE Electron Device Letters;2023-04

2. Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs;Electronics;2022-09-22

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