Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current-Reference-Cited by-同舟云学术

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Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Symposium on VLSI Technology
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Author:

Frougier J.,Shukla N.,Deng D.,Jerry M.,Aziz A.,Liu L.,Lavallee G.,Mayer T. S.,Gupta S.,Datta S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573445.pdf?arnumber=7573445

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing;IEEE Transactions on Nanotechnology;2024

2. Design Space Exploration for Phase Transition Material-Augmented MRAMs With Separate Read-Write Paths;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2024-01

3. A Review on emerging Phase Transition FETs (Hyper-FETs) for applications demanding Low Power;2023 10th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering (UPCON);2023-12-01

4. Phase Transition Material Modulated Hyper FET for Digital Applications;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

5. Design Space Exploration for Threshold Switch Assisted Memristive Memory;IEEE Transactions on Nanotechnology;2023

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