Design Space Exploration for Threshold Switch Assisted Memristive Memory-Reference-Cited by-同舟云学术

Design Space Exploration for Threshold Switch Assisted Memristive Memory

Published:2023 Issue: Volume:22 Page:457-465
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Alam Shamiul¹^ORCID,Islam Md Mazharul¹^ORCID,Hutchins Jack¹^ORCID,Cady Nathaniel²^ORCID,Gupta Sumeet Kumar³^ORCID,Rose Garrett¹^ORCID,Aziz Ahmedullah¹^ORCID

Affiliation:

1. Deptartment of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, USA

2. College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY, USA

3. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA

Funder

Air Force Research Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/10016255/10221732.pdf?arnumber=10221732

Reference32 articles.

1. Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material

2. Threshold Switch Augmented STT MRAM: Design Space Analysis and Device-Circuit Co-Design

3. A Threshold Switch Augmented Hybrid-FeFET (H-FeFET) with Enhanced Read Distinguishability and Reduced Programming Voltage for Non-Volatile Memory Applications

4. Design Space Exploration for Phase Transition Material-Augmented MRAMs With Separate Read-Write Paths

5. Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector

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