Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique-Reference-Cited by-同舟云学术

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Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique

Published:2004 Issue: Volume: Page:
ISSN:
Container-title:Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.
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Author:

Aberg I.,Olubuyide O.O.,Chleirigh C.N.,Lauer I.,Antoniadis D.A.,Li J.,Hull R.,Hoyt J.L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9327/29638/01345388.pdf?arnumber=1345388

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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