130 nm-technology, 0.25 ¿m<sup>2</sup>, 1T1C FRAM Cell for SoC (System-on-a-Chip)-friendly Applications-Reference-Cited by-同舟云学术

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130 nm-technology, 0.25 ¿m², 1T1C FRAM Cell for SoC (System-on-a-Chip)-friendly Applications

Published:2007-06 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE Symposium on VLSI Technology
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Author:

Hong Y. K.,Jung D. J.,Kang S. K.,Kim H. S.,Jung J. Y.,Koh H. K.,Park J. H.,Choi D. Y.,Kim S. E.,Ann W. S.,Kang Y. M.,Kim H. H.,Kim J.-H.,Jung W. U.,Lee E. S.,Lee S. Y.,Jeong H. S.,Kim Kinam

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4339664/4339665/04339704.pdf?arnumber=4339704

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics;Advanced Materials;2023-03-11

2. Influence of structural properties on the ferroelectric behavior of hexagonal AlScN;Journal of Applied Physics;2022-09-21

3. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges;Chemical Reviews;2022-02-08

4. ХАРАКТЕР ДЕГРАДАЦИИ ЭЛЕКТРИЧЕСКОГО ОТКЛИКА ЭЛЕМЕНТА ХРАНЕНИЯ FeRAM НА ОСНОВЕ ТОНКИХ СЛОЕВ ДИОКСИДА ГАФНИЯ, "Электронная техника. Серия 3. Микроэлектроника";Электронная техника. Серия 3. Микроэлектроника;2022

5. A New Generation of Memory Devices Enabled by Ferroelectric Hafnia and Zirconia;2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF);2021-05-16

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