SOI CMOS Technology with 360GHz f<inf>T</inf> NFET, 260GHz f<inf>T</inf> PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications-Reference-Cited by-同舟云学术

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SOI CMOS Technology with 360GHz fT NFET, 260GHz fT PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications

Published:2007-06 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE Symposium on VLSI Technology
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Author:

Lee Sungjae,Kim Jonghae,Kim Daeik,Jagannathan Basanth,Cho Choongyeun,Johnson Jim,Dufrene Brian,Zamdmer Noah,Wagner Lawrence,Williams Richard,Fried David,Rim Ken,Pekarik John,Springer Scott,Plouchart Jean-Olivier,Freeman Greg

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4339664/4339665/04339724.pdf?arnumber=4339724

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiofrequency transistors based on aligned carbon nanotube arrays;Nature Electronics;2021-06

2. TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures;Russian Microelectronics;2018-11

3. Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology;IEEE Transactions on Nuclear Science;2017-01

4. Fully Depletion of Advanced Silicon on Insulator MOSFETs;Critical Reviews in Solid State and Materials Sciences;2015-02-18

5. Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit;Solid-State Electronics;2014-07

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