Performance of 70 nm strained-silicon CMOS devices-Reference-Cited by-同舟云学术

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Performance of 70 nm strained-silicon CMOS devices

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Container-title:2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
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Author:

Hwang J.R.,Ho J.H.,Ting S.M.,Chen T.P.,Hsieh Y.S.,Huang C.C.,Chiang Y.Y.,Lee H.K.,Ariel Liu ,Shen T.M.,Braithwaite G.,Currie M.,Gerrish N.,Hammond R.,Lochtefeld A.,Singaporewala F.,Bulsara M.,Xiang Q.,Lin M.R.,Shiau W.T.,Loh Y.T.,Chen J.K.,Chien S.C.,Wen F.

Publisher

Japan Soc. Applied Phys

Link

http://xplorestaging.ieee.org/ielx5/8657/27436/01221107.pdf?arnumber=1221107

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing the Performance of CMOS Amplifiers Using High-k Dielectric with Metal Gate on High Mobility Substrate;Communications in Computer and Information Science;2018

2. Strain induced changes in performance of strained-Si/strained-Si1-y Ge y /relaxed-Si1-x Ge x MOSFETs and circuits for digital applications;Journal of Central South University;2017-06

3. Development of a simulator for analyzing some performance parameters of nanoscale strained silicon MOSFET-based CMOS inverters;Microelectronics Journal;2016-09

4. Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry;Thin Solid Films;2006-08

5. Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire Field Effect Transistors;Journal of Computational Electronics;2004-10

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