A novel cell technology using N-doped GeSbTe films for phase change RAM-Reference-Cited by-同舟云学术

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A novel cell technology using N-doped GeSbTe films for phase change RAM

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Container-title:2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
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Author:

Horii H.,Yi J.H.,Park J.H.,Ha Y.H.,Baek I.G.,Park S.O.,Hwang Y.N.,Lee S.H.,Kim Y.T.,Lee K.H.,U-In Chung ,Moon J.T.

Publisher

Japan Soc. Applied Phys

Link

http://xplorestaging.ieee.org/ielx5/8657/27436/01221143.pdf?arnumber=1221143

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4. A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory;ACS Applied Electronic Materials;2023-10-25

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