Multiple Stress Memorization In Advanced SOI CMOS Technologies-Reference-Cited by-同舟云学术

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Multiple Stress Memorization In Advanced SOI CMOS Technologies

Published:2007-06 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE Symposium on VLSI Technology
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Author:

Wei A.,Wiatr M.,Mowry A.,Gehring A.,Boschke R.,Scott C.,Hoentschel J.,Duenkel S.,Gerhardt M.,Feudel T.,Lenski M.,Wirbeleit F.,Otterbach R.,Callahan R.,Koerner G.,Krumm N.,Greenlaw D.,Raab M.,Horstmann M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4339664/4339665/04339698.pdf?arnumber=4339698

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon- and Tin- Incorporated Source/Drain Stressors for CMOS Transistors;ECS Transactions;2019-12-18

2. Scaling CMOS to Nanoscale: Beyond the Planar Bulk Silicon MOSFET;Reference Module in Materials Science and Materials Engineering;2019

3. Discrete Loading Ring-Core Method for Nonuniform In-Plane Residual Stress Analysis in Micro Area;Journal of Applied Mechanics;2018-06-14

4. CMOS and Beyond CMOS: Scaling Challenges;High Mobility Materials for CMOS Applications;2018

5. Strain engineering;CMOS Past, Present and Future;2018

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