Si tunnel transistors with a novel silicided source and 46mV/dec swing-Reference-Cited by-同舟云学术

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Si tunnel transistors with a novel silicided source and 46mV/dec swing

Published:2010-06 Issue: Volume: Page:
ISSN:
Container-title:2010 Symposium on VLSI Technology
language:
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Author:

Jeon Kanghoon,Loh Wei-Yip,Patel Pratik,Kang Chang Yong,Oh Jungwoo,Bowonder Anupama,Park Chanro,Park C. S.,Smith Casey,Majhi Prashant,Tseng Hsing-Huang,Jammy Raj,Liu Tsu-Jae King,Hu Chenming

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5548927/5556114/05556195.pdf?arnumber=5556195

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