First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices-Reference-Cited by-同舟云学术

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First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices

Published:2018-06 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE Symposium on VLSI Technology
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Author:

Delhougne R.,Arreghini A.,Rosseel E.,Hikavyy A.,Vecchio E.,Zhang L.,Pak M.,Nyns L.,Raymaekers T.,Jossart N.,Breuil L.,V-Palayam S. S.,Tan C.-L.,Van den bosch G.,Furnemont A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8481640/8510617/08510635.pdf?arnumber=8510635

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs;IEEE Transactions on Electron Devices;2024-01

2. Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors;Advanced Electronic Materials;2022-09-18

3. Analytical Exploration and Simulation of Dual-Material Gate Macaroni Channel MOSFET biosensor using dielectric-modulation technique;Micro and Nanostructures;2022-05

4. Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory;2021 IEEE International Electron Devices Meeting (IEDM);2021-12-11

5. Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories;IEICE Electronics Express;2021-10-10

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