Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter-Reference-Cited by-同舟云学术

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Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter

Published:1993-06 Issue:6 Volume:14 Page:295-297
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Enquist P.M.,Slater D.B.,Hutchby J.A.,Morris A.S.,Trew R.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/5622/00215203.pdf?arnumber=215203

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 183 GHz<tex>$f _tau$</tex>and 165 GHz<tex>$f _max$</tex>Regrown-Emitter DHBT With Abrupt InP Emitter;IEEE Electron Device Letters;2004-06

2. A 160-GHz<tex>$f_T$</tex>and 140-GHz<tex>$f_rm MAX$</tex>Submicrometer InP DHBT in MBE Regrown-Emitter Technology;IEEE Electron Device Letters;2004-05

3. High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance;Electronics Letters;2001

4. Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor with a pseudomorphic InGaAs/GaAs quantum-well base;Microelectronics Reliability;1999-09

5. Low damage dry etching of III–V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07

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