Low damage dry etching of III–V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.581791
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals;Journal of Semiconductors;2010-01
2. Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors;Microelectronic Engineering;2009-12
3. Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl2/N2 and Cl2/Ar Mixtures at Low Bias Power;Journal of the Korean Physical Society;2007-04-14
4. Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
5. Deepin situdry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
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