Experimental Study and Comparison of Switching Loss Behavior of Si IGBT and SiC MOSFET in Dual Active Bridge Series Resonant Converter-Reference-Cited by-同舟云学术

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Experimental Study and Comparison of Switching Loss Behavior of Si IGBT and SiC MOSFET in Dual Active Bridge Series Resonant Converter

Published:2023-06-06 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Conference on Environment and Electrical Engineering and 2023 IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe)
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Author:

Bhakare Onkar¹,Ghosh Kousik¹,Chakraborty Surja Sekhar¹,Hatua Kamalesh¹

Affiliation:

1. IIT Madras,Department of Electrical Engineering,Chennai,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10194576/10194600/10194837.pdf?arnumber=10194837

Reference16 articles.

1. A Control Method to Reduce Overshoots in High-Frequency Link Current and Voltages at Load Transients of a Dual-Active-Bridge Series-Resonant Converter

2. Dual-active-bridge series resonant converter: A new control strategy using phase-shifting combined frequency modulation

3. Modeling of Soft-Switching Losses of IGBTs in High-Power High-Efficiency Dual-Active-Bridge DC/DC Converters

4. On Dynamic Effects Influencing IGBT Losses in Soft-Switching Converters

5. Review and analysis of SiC MOSFETs’ ruggedness and reliability

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test;Energies;2024-05-24

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