Modelling and measurements of thermomechanical stress induced drift on polysilicon resistors with different layout-Reference-Cited by-同舟云学术

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Modelling and measurements of thermomechanical stress induced drift on polysilicon resistors with different layout

Published:2019-04 Issue: Volume: Page:
ISSN:
Container-title:2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
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Author:

Benvenuti Lorenzo,Bruschi Paolo,Fanucci Luca,Coppeta Raffaele,Carniello Sara,Piro Luigi Di,Tinfena Francesco

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8732928/8734906/08734970.pdf?arnumber=8734970

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On thermally-induced mechanical stress in high resistivity polysilicon resistors;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

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