Noise and admittance of the generation—Recombination current involving SRH centers in the space-charge region of junction devices-Reference-Cited by-同舟云学术

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Noise and admittance of the generation—Recombination current involving SRH centers in the space-charge region of junction devices

Published:1976-11 Issue:11 Volume:23 Page:1236-1246
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

van Vliet K.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31756/01478598.pdf?arnumber=1478598

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