Large- and small-signal channel transit time delays in long-channel MOS transistors-Reference-Cited by-同舟云学术

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Large- and small-signal channel transit time delays in long-channel MOS transistors

Published:1977-02 Issue:2 Volume:24 Page:99-107
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mikami Y.,Thomas R.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31760/01478879.pdf?arnumber=1478879

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic and Transient Analysis of Silicon-Based Thin-Film Transistors: Channel Propagation Model;Journal of Display Technology;2013-11

2. Parametric Analog Signal Amplification Applied to Nanoscale CMOS Technologies;2012

3. A non-quasistatic semi-empirical model for small geometry MOSFETs;Solid-State Electronics;1997-09

4. Der MOSFET im dynamischen Betrieb;MOS-Feldeffekttransistoren;1994

5. Transient hot-electron effect and its impact on circuit reliability;Microelectronics Reliability;1993-09

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