Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts-Reference-Cited by-同舟云学术

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Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

Published:2018-04 Issue:4 Volume:39 Page:568-571
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Xia Zhanbo^ORCID,Joishi Chandan^ORCID,Krishnamoorthy Sriram^ORCID,Bajaj Sanyam^ORCID,Zhang Yuewei,Brenner Mark,Lodha Saurabh,Rajan Siddharth

Funder

Department of Defense, Defense Threat Reduction Agency

ONR EXEDE MURI Program

OSU Institute for Materials Research Seed Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8322355/08291575.pdf?arnumber=8291575

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3. Gallium Oxide‐Based Field Effect Transistors;physica status solidi (a);2024-07-17

4. Resistor-to-Schottky barrier analytical model for ohmic contact test structures;Semiconductor Science and Technology;2024-05-21

5. Heavily Doped Channel Carrier Mobility in β-Ga₂O₃ Lateral Accumulation MOSFET;IEEE Transactions on Electron Devices;2024-05

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