${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{\textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/8322355/08287024.pdf?arnumber=8287024
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