Atomic layer deposition of TiN/Ru gate in InP MOSFETs-Reference-Cited by-同舟云学术

Atomic layer deposition of TiN/Ru gate in InP MOSFETs

Published:2021-09-20 Issue:12 Volume:119 Page:123502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tseng Hsin-Ying¹^ORCID,Fang Yihao¹^ORCID,Mitchell William James²,Taylor Aidan Arthur³,Rodwell Mark J. W.¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

2. UCSB Nanofabrication Facility, University of California Santa Barbara, Santa Barbara, California 93106, USA

3. Department of Materials Science, University of California Santa Barbara, Santa Barbara, California 93106, USA

Funder

National Science Foundation

Semiconductor Research Corporation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058825

Reference30 articles.

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2. 20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon

3. In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz fτ and 256 GHz f max

4. E. Memisevic , J. Svensson , M. Hellenbrand , E. Lind , and L. E. Wernersson , in Technical Digest-International Electron Devices Meeting (IEDM) ( IEEE, 2017), pp. 19.1.1–19.1.4.

5. C. Convertino , K. E. Moselund , C. B. Zota , Y. Baumgartner , P. Staudinger , M. Sousa , S. Mauthe , D. Caimi , L. Czornomaz , and A. M. Ionescu , in Technical Digest-International Electron Devices Meeting (IEDM) ( IEEE, 2019), pp. 2019–2022.

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1. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P_out at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-07

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