Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer
Author:
Funder
National Science Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/8631039/08579236.pdf?arnumber=8579236
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunable EOT Scaling Down to 0.55 nm for HfO2-Based Gate-Stacks on Ge Substrate by In Situ H2 Plasma Treatment;ECS Journal of Solid State Science and Technology;2024-05-01
2. Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition;IEEE Transactions on Electron Devices;2024-03
3. Demonstration of HfO2-Based Gate Stacks with Ultralow Interface State Density and Leakage Current on Ge pMOSFET by Adding Hafnium into GeOx Interfacial Layer;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
4. Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants;Materials;2021-12-06
5. Improving Thermal Stability for Ge p-MOSFET of HfO2-Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition;IEEE Electron Device Letters;2021-08
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