0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique-Reference-Cited by-同舟云学术

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Published:2018-03 Issue:3 Volume:39 Page:397-400
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hou Bin^ORCID,Ma Xiaohua^ORCID,Zhu Jiejie^ORCID,Yang Ling^ORCID,Chen Weiwei,Mi Minhan,Zhu Qing,Chen Lixiang,Zhang Rong,Zhang Meng^ORCID,Zhou Xiaowei,Hao Yue

Funder

Key Program of the National Natural Science Foundation of China

National High Technology Research and Development Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8303574/08252704.pdf?arnumber=8252704

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