A 16-kb Antifuse One-Time-Programmable Memory in 5-nm High-K Metal-Gate FinFET CMOS Featuring Bootstrap High-Voltage Scheme, Read Endpoint Detection, and Pseudodifferential Sensing
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Published:2021
Issue:
Volume:4
Page:170-173
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ISSN:2573-9603
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Container-title:IEEE Solid-State Circuits Letters
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language:
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Short-container-title:IEEE Solid-State Circuits Lett.
Author:
Chou Shao-Yu ShaunORCID,
Chen Shawn,
Chang Jun-Hao,
Cheng Wan-Hsueh,
Chih Yu-Der,
Fan Philex,
Huang Chia-En,
Hung Cher-Ming,
Li Gu-Huan,
Wang Yih,
Wu Shao-Ding,
Chang Tsung-Yung Jonathan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Cited by
1 articles.
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