A 21-dBm 3.7 W/mm² 28.7% PAE 64-GHz Power Amplifier in 22-nm FD-SOI

Author:

Cui MengqiORCID,Carta Corrado,Ellinger FrankORCID

Funder

Project PROSECCO

Sächsisches Staatsministerium für Wissenschaft und Kunst

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Systematic Design Methodology for CMOS Millimeter-Wave Power Amplifiers With an E-Band Fully Differential Implementation in 16-nm FinFET;IEEE Transactions on Microwave Theory and Techniques;2024-08

2. A Class-J/F 60 GHz Power Amplifier with 42.3% Power Added Efficiency in FDSOI CMOS;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. A Ku-Band Power Amplifier in 22nm FDSOI;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

4. A 76–81-GHz Power Amplifier With 14.6-dBm Psat and 25.1% PAE on 22-nm FDSOI Technology;IEEE Microwave and Wireless Technology Letters;2024-01

5. A 62-GHz High-Efficiency Power Amplifier With Modulation Capability via Back-Gate in 22-nm FD-SOI;IEEE Solid-State Circuits Letters;2023

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