A 62-GHz High-Efficiency Power Amplifier With Modulation Capability via Back-Gate in 22-nm FD-SOI-Reference-Cited by-同舟云学术

A 62-GHz High-Efficiency Power Amplifier With Modulation Capability via Back-Gate in 22-nm FD-SOI

Published:2023 Issue: Volume:6 Page:49-52
ISSN:2573-9603
Container-title:IEEE Solid-State Circuits Letters
language:
Short-container-title:IEEE Solid-State Circuits Lett.

Author:

Xu Xin¹^ORCID,Wagner Jens²^ORCID,Ellinger Frank²^ORCID

Affiliation:

1. Chair for Circuit Design and Network Theory, Technische Universität Dresden, Dresden, Germany

2. Chair for Circuit Design and Network Theory and the Centre for Tactile Internet With Human-in-the-Loop (CeTI), Technische Universität Dresden, Dresden, Germany

Funder

Bundesministerium f?r Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8011414/10016898/10038982.pdf?arnumber=10038982

Reference9 articles.

1. 60-GHz Power Amplifier in 45-nm SOI-CMOS Using Stacked Transformer-Based Parallel Power Combiner

2. Efficient 60-GHz Power Amplifier With Adaptive AM-AM and AM-PM Distortions Compensation in 65-nm CMOS Process

3. A 60-GHz Power Amplifier With AM–PM Distortion Cancellation in 40-nm CMOS

4. A 19.1% PAE, 22.4-dBm 53-GHz Parallel Power Combining Power Amplifier with Stacked-FET Techniques in 90-nm CMOS

5. A 21-dBm 3.7 W/mm² 28.7% PAE 64-GHz Power Amplifier in 22-nm FD-SOI

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 60 GHz Broadband LNA With Joined Variable Gain Control and Switching in 22 nm FD-SOI;IEEE Access;2024

2. A 60 GHz Down-Conversion Mixer featuring Energy-saving Standby-Mode in 22 nm FD-SOI;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05

3. Switchable V-band Power Amplifier with Ultra-Fast Turn-On for Aggressive Duty-Cycling;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. A 60 GHz Up-Conversion Mixer in 22 nm FD-SOI CMOS with Back-Gate Mode Switching;2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2023-08-14