Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors

Published:2005-06 Issue:2 Volume:5 Page:183-189
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Sheng-Yi Huang ,Kun-Ming Chen ,Guo-Wei Huang ,Victor Liang ,Hua-Chou Tseng ,Hsu T.-L.,Chun-Yen Chang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/31396/01458732.pdf?arnumber=1458732

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4. Physical characterization of As-Se-S glasses;Materials Research Express;2018-06-29

5. Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-wave applications: proposal of reliability-aware circuit design methodology;International Journal of Microwave and Wireless Technologies;2018-06

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