A 28 GHz Power Amplifier Based on Broadband Adaptive Linearization Technique in 65-nm CMOS-Reference-Cited by-同舟云学术

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A 28 GHz Power Amplifier Based on Broadband Adaptive Linearization Technique in 65-nm CMOS

Published:2023-05-14 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE MTT-S International Wireless Symposium (IWS)
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Author:

Liang Zhuohang¹,Zhu Haoshen¹,Chen Jiawen¹,Che Wenquan¹,Xue Quan²

Affiliation:

1. School of Electronic and Information Engineering, South China University of Technology,Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz,Guangzhou,China

2. School of Microelectronics, South China University of Technology,Guangzhou,China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China (NSFC)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10221938/10221896/10222161.pdf?arnumber=10222161

Reference8 articles.

1. A Highly Linear and Efficient 28-GHz PA With a P sat of 23.2 dBm, P 1 dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS

2. A 28-GHz CMOS Power Amplifier Linearized by Dynamic Conductance Control and Body Carrier Injection

3. A K-Band Power Amplifier with 26-dBm Output Power and 34% P AE with Novel Induct-ance-based Neutralization in 90-nm CMOS;huang;2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),0

4. Multigate-Cell Stacked FET Design for Millimeter-Wave CMOS Power Amplifiers

5. A 28GHz 41 %-P AE linear CMOS power amplifier using a transformer-based AM-PM distortion-correction technique for 5G phased ar-rays;ali;2018 IEEE International Solid - State Circuits Conference - (ISSCC),0

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