A Highly Linear and Efficient 28-GHz PA With a P sat of 23.2 dBm, P 1 dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS-Reference-Cited by-同舟云学术

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A Highly Linear and Efficient 28-GHz PA With a P sat of 23.2 dBm, P 1 dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS

Published:2021-03 Issue:3 Volume:56 Page:914-927
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Asoodeh Alireza,Lavasani Hossein Miri,Cai Mengye,Mirabbasi Shahriar

Funder

Natural Sciences and Engineering Research Council of Canada. CAD tools support and access to technology is facilitated by CMC Micro-systems

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9361453/09270581.pdf?arnumber=9270581

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Highly Linear and Efficient V-Band CMOS Power Amplifier Using Hybrid NMOS/PMOS for Double Nonlinearity Cancellation With Four-Way Distributed-Active-Transformer;IEEE Journal of Solid-State Circuits;2024-07

2. A Dual-Path Transformer-Based Multiband Power Amplifier for mm-Wave 5G Applications;IEEE Journal of Solid-State Circuits;2024-06

3. Challenges and Future Trends;GaN Technology;2024

4. A 25.5-31GHz Power Amplifier Using Enhancement-Mode High-K Dielectric GaN MOS-HEMTs in 300mm GaN-on-Si Technology;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

5. A 28 GHz Power Amplifier Based on Broadband Adaptive Linearization Technique in 65-nm CMOS;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14

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