Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates-Reference-Cited by-同舟云学术

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Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates

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Container-title:Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
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Author:

Andre C.L.,Khan A.,Gonzalez M.,Hudait M.K.,Fitzgerald E.A.,Carlin J.A.,Currie M.T.,Leitz C.W.,Langdo T.A.,Clark E.B.,Wilt D.M.,Ringel S.A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8468/26685/01190784.pdf?arnumber=1190784

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon;AIP Conference Proceedings;2020

3. Uprooting defects to enable high-performance III–V optoelectronic devices on silicon;Nature Communications;2019-09-20

4. 16.8%-Efficient n+/p GaAs Solar Cells on Si With High Short-Circuit Current Density;IEEE Journal of Photovoltaics;2019-05

5. SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions;Journal of Crystal Growth;2019-03

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