16.8%-Efficient n+/p GaAs Solar Cells on Si With High Short-Circuit Current Density-Reference-Cited by-同舟云学术

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16.8%-Efficient n+/p GaAs Solar Cells on Si With High Short-Circuit Current Density

Published:2019-05 Issue:3 Volume:9 Page:660-665
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Fan Shizhao^ORCID,Jung Daehwan,Sun Yukun,Li Brian D.,Martin-Martin Diego^ORCID,Lee Minjoo L.

Funder

National Science Foundation

Advanced Research Projects Agency-Energy

Spanish Ministerio de Ciencia, Innovación y Universidades

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielaam/5503869/8694165/8638510-aam.pdf

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si;IEEE Journal of Photovoltaics;2024-07

2. Model development of lattice-matched p-GaInP/i-GaAs/n-GaInP hetero-junction solar cell and its performance optimization;Optical Materials;2023-09

3. GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer;Energies;2023-01-20

4. TOPcon route with quantum wells in GaInP/Si dual junction cell for efficiency enhancement;Solar Energy;2023-01

5. Analytical Model of InP QWs for Efficiency Improvement in GaInP/Si Dual Junction Solar Cell;physica status solidi (a);2022-12-29

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