An Analytical Expression for the Transfer Characteristics of a Polycrystalline Silicon Thin-Film Transistor With an Undoped Channel
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/5075842/05061731.pdf?arnumber=5061731
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors;Acta Physica Polonica A;2017-10
2. CdS Thin Film Transistor for Inverter and Operational Amplifier Circuit Applications;Microelectronic Engineering;2016-05
3. Investigations on the Gate-Induced Drain Leakage Current of Polycrystalline-Silicon Thin-Film Transistor and Its Suppression With Drain Bias Sweep;IEEE Transactions on Electron Devices;2016-04
4. Tempered glass substrate effect on the growth of polycrystalline-silicon and its applications for reliable thin-film transistors;RSC Advances;2015
5. An Analytical Subthreshold Model of Polycrystalline Silicon Thin-Film Transistors Based on Meyer-Neldel Rule;IEEE Transactions on Electron Devices;2014-03
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