A fully planar p-n-p heterojunction bipolar transistor-Reference-Cited by-同舟云学术

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A fully planar p-n-p heterojunction bipolar transistor

Published:1988-03 Issue:3 Volume:9 Page:116-118
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sunderland D.A.,Haden J.M.,Dzurko K.M.,Stanchina W.E.,Lee W.-C.,Danner A.D.,Dapkus P.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/126/00002060.pdf?arnumber=2060

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs HBT's for microwave integrated circuits;Proceedings of the IEEE;1993

2. Heterostructure Bipolar Transistors;Physics of High-Speed Transistors;1993

3. Growth ofPnpheterojunction bipolar transistor structures by metalorganic molecular beam epitaxy;Journal of Applied Physics;1992-02

4. Device-related material properties of heavily doped gallium arsenide;Solid-State Electronics;1990-06

5. Monolayer Be δ-doped heterostructure bipolar transistor fabricated using doping selective base contact;Electronics Letters;1990

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