Monolayer Be δ-doped heterostructure bipolar transistor fabricated using doping selective base contact-Reference-Cited by-同舟云学术

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Monolayer Be δ-doped heterostructure bipolar transistor fabricated using doping selective base contact

Published:1990 Issue:15 Volume:26 Page:1187
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Kuo T.Y.,Cunningham J.E.,Goossen K.W.,Jan W.Y.,Fonstad C.G.,Ren F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19900768?crawler=true&mimetype=application/pdf

Reference7 articles.

1. Heterostructure bipolar transistors and integrated circuits

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Developments in Doping Techniques for Compound Semiconductors;MRS Proceedings;1993

2. Monolayer δ‐doped heterojunction bipolar transistor characteristics from 10 to 350 K;Applied Physics Letters;1991-08-05

3. Planarized Be δ-Doped Heterostructure Bipolar Transistor Fabricated Using Doping Selective Contact and Selective Hole Epitaxy;Japanese Journal of Applied Physics;1991-02-15

4. Planarization of emitter-base structure of heterojunction bipolar transistors by doping selective base contact and nonalloyed emitter contact;IEEE Transactions on Electron Devices;1991

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