Monolayer δ‐doped heterojunction bipolar transistor characteristics from 10 to 350 K
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105364
Reference8 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. Base doping limits in heterostructure bipolar transistors
3. Ga0.72Al0.28As/Ga0.99Be0.01As heterojunction bipolar transistor grown by molecular beam epitaxy
4. A planar-doped 2D-hole gas base AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy
5. Monolayer Be δ-doped heterostructure bipolar transistor fabricated using doping selective base contact
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1. δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition;Thin Solid Films;2007-02
2. Heterostructure and Compound Semiconductor Devices;Low Temperature Electronics;2001
3. Radiative recombination inp-typeδ-doped layers in GaAs;Physical Review B;1999-07-15
4. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
5. Growth of Zn δ-doped AlxGa1−xAs (x = 0–0.65) by low pressure metal organic vapour phase epitaxy;Applied Surface Science;1996-02
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