A 24-31GHz 28nm FD-SOI CMOS 3:1 VSWR Resilient Inductive Hybrid Coupler-Based Doherty Power Amplifier
Author:
Affiliation:
1. University of Bordeaux,IMS Laboratory,Talence,France
2. STMicroelectronics,Crolles,France
Funder
STMicroelectronics
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188066.pdf?arnumber=10188066
Reference7 articles.
1. A 24-31GHz 28nm FD-SOI CMOS Balanced Power Amplifier Robust to 3:1 VSWR for 5G Application
2. A 28GHz Compact 3-Way Transformer-Based Parallel-Series Doherty Power Amplifier With 20.4%/14.2% PAE at 6-/12-dB Power Back-off and 25.5dBm PSAT in 55nm Bulk CMOS
3. 24.3 A 28GHz Current-Mode Inverse-Outphasing Transmitter Achieving 40%/31% PA Efficiency at Psat/6dB PBO and Supporting 15Gbit/s 64-QAM for 5G Communication
4. 24.2 A Reconfigurable Series/Parallel Quadrature-Coupler-Based Doherty PA in CMOS SOI with VSWR Resilient Linearity and Back-Off PAE for 5G MIMO Arrays
5. 26.2 A Doherty-Like Load-Modulated Balanced Power Amplifier Achieving 15.5dBm Average Pout and 20% Average PAE at a Data Rate of 18Gb/s in 28nm CMOS
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 22-44 GHz 28nm FD-SOI CMOS 5G Doherty Power Amplifier with Wideband PAE6dBPBO Enhancement and 3:1 VSWR Resiliency;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
2. Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications;IEEE Transactions on Microwave Theory and Techniques;2024-04
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