A 22-44 GHz 28nm FD-SOI CMOS 5G Doherty Power Amplifier with Wideband PAE<sub>6dBPBO</sub> Enhancement and 3:1 VSWR Resiliency-Reference-Cited by-同舟云学术

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A 22-44 GHz 28nm FD-SOI CMOS 5G Doherty Power Amplifier with Wideband PAE_6dBPBO Enhancement and 3:1 VSWR Resiliency

Published:2024-06-16 Issue: Volume:64 Page:131-134
ISSN:
Container-title:2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Diverrez Gwennaël¹,Kerherve Eric¹,De Matos Magali¹,Cathelin Andreia²

Affiliation:

1. Univ. Bordeaux,CNRS, Bordeaux INP, IMS, UMR 5218,France

2. STMicroelectronics,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10599936/10599927/10600014.pdf?arnumber=10600014

Reference9 articles.

1. A Wideband Class-AB Power Amplifier With 29–57-GHz AM–PM Compensation in 0.9-V 28-nm Bulk CMOS

2. 26.3 A mm-Wave Power Amplifier for 5G Communication Using a Dual-Drive Topology Exhibiting a Maximum PAE of 50% and Maximum DE of 60% at 30GHz

3. 24.6 An Instantaneously Broadband Ultra-Compact Highly Linear PA with Compensated Distributed-Balun Output Network Achieving >17.8dBm P1dB and >36.6% PAEP1dB over 24 to 40GHz and Continuously Supporting 64-/256-QAM 5G NR Signals over 24 to 42GHz

4. 25.2 A 19.7-to-43.8GHz Power Amplifier with Broadband Linearization Technique in 28nm Bulk CMOS

5. A Doherty-Like Load-Modulated Balanced Power Amplifier Achieving 15.5dBm;Qunaj

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