New Real-Time Pulsed-RF NVNA Testbed for Isothermal Characterization of Traps in GaN HEMTs
Author:
Affiliation:
1. Ohio State University,Nonlinear RF Lab,USA
2. Wright-Patterson AFB,Air Force Research Lab,USA
Funder
Air Force Office of Scientific Research
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10187954.pdf?arnumber=10187954
Reference7 articles.
1. Large-signal network analysis
2. A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load Line
3. A Sampling Oscilloscope Based System with Active RF/IF Load-pull for Multi-Tone Non-linear Device Characterization;chaudhary;IJMOT,2013
4. Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements
5. Experimental Investigation of Resistive–Reactive Class-J Mode Using Time-Domain Low-Frequency Active Harmonic Load–Pull Measurements
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Calibration of an Oscilloscope-Based NVNA for Periodic Modulated Signals;2024 103rd ARFTG Microwave Measurement Conference (ARFTG);2024-06-21
2. Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed;IEEE Transactions on Microwave Theory and Techniques;2024
3. A Time-Domain Vector Network Analyzer Suitable to Characterize Passive and Active Devices;2023 IEEE MTT-S Latin America Microwave Conference (LAMC);2023-12-06
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