A 110-GHz Push-Push Balanced Colpitts Oscillator Using 0.15-μm GaN HEMT Technology-Reference-Cited by-同舟云学术

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A 110-GHz Push-Push Balanced Colpitts Oscillator Using 0.15-μm GaN HEMT Technology

Published:2023-06-11 Issue: Volume: Page:
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Container-title:2023 IEEE/MTT-S International Microwave Symposium - IMS 2023
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Author:

Wang Jiayou¹,Chang Yin-Cheng²,Liu Yeke¹,Li Sih-Han¹,Chang Da-Chiang²,Huang Yi³,Hsu Shawn S. H.¹

Affiliation:

1. National Tsing Hua University,Institute of Electronics Engineering,Hsinchu,Taiwan

2. Taiwan Semiconductor Research Institute,National Applied Research Laboratories,Hsinchu,Taiwan

3. The University of Liverpool,Department of Electrical Engineering and Electronics,Liverpool,UK

Funder

National Science and Technology Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188124.pdf?arnumber=10188124

Reference8 articles.

1. A 92 GHz GaN HEMT voltage-controlled oscillator MMIC

2. W- and G-Band GaN Voltage-Controlled Oscillators With High Output Power and High Efficiency

3. E-band 85-mW oscillator and 1.3-W amplifier ICs using 0.12?m GaN HEMTs for mmw transceivers;nakasha;Proc CSICS'10,2010

4. Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ka-Band High Power and Low Phase Noise GaN MMIC Oscillator with a Compact Open-Loop Folded Resonator Filter;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A V-Band Oscillator Using GaN HEMTs;2024 IEEE International Workshop on Radio Frequency and Antenna Technologies (iWRF&AT);2024-05-31

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