mm-Wave GaN-on-Si HEMTs with a P<sub>SAT</sub> of 3.9W/mm at 28GHz-Reference-Cited by-同舟云学术

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mm-Wave GaN-on-Si HEMTs with a P_SAT of 3.9W/mm at 28GHz

Published:2023-06-11 Issue: Volume: Page:
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Container-title:2023 IEEE/MTT-S International Microwave Symposium - IMS 2023
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Author:

ElKashlan Rana¹,Khaled Ahmad¹,Yadav Sachin¹,Yu Hao¹,Peralagu Uthayasankaran¹,Alian AliReza¹,Collaert Nadine¹,Wambacq Piet¹,Parvais Bertrand¹

Affiliation:

1. Imec,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10187888/10187785/10187976.pdf?arnumber=10187976

Reference20 articles.

1. Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs

2. Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

3. Influence of the Dynamic Access Resistance in the$g_m$and$f_T$Linearity of AlGaN/GaN HEMTs

4. Linearity Aspects of High Power Amplification in GaN Transistors

5. High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates;Applied Physics Letters;2024-08-12

2. Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2024

3. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability;IEEE Transactions on Electron Devices;2023

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