A V-Band LC-VCO and Doubler with Wide Tuning Range and Low Phase Noise Using Series-Shunt Anti-Parallel SiGe HBT Switches
Author:
Affiliation:
1. Georgia Tech,School of Electrical and Computer Engineering,USA
2. Georgia Tech Research Institute,Advanced Concepts Laboratory,USA
Funder
GlobalFoundries
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10187935.pdf?arnumber=10187935
Reference10 articles.
1. A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch
2. A 47.6–71.0-GHz 65-nm CMOS VCO Based on Magnetically Coupled $\pi $-Type LC Network
3. A simple model of feedback oscillator noise spectrum
4. Wide Tuning-Range mm-Wave Voltage-Controlled Oscillator Employing an Artificial Magnetic Transmission Line
5. 20.3 A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 60 GHz low phase noise VCO with second harmonic tail extraction in 40-nm CMOS;AEU - International Journal of Electronics and Communications;2024-11
2. A 43–84 GHz, Wideband Frequency Doubler with a Symmetric, AC-Terminated Transformer Balun;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
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