High-Power Microwave Generation With Photoconductors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx5/50/4652258/04652319.pdf?arnumber=4652319
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Donor–Acceptor Compensation on Transient Performance of Vanadium-Doped SiC Photoconductive Switches Using 532-nm Laser;IEEE Transactions on Electron Devices;2024-07
2. Dual-Stacked SiC Vertical Photoconductive Switch for Modulation Bandwidth Extension of Frequency-Agile Power Microwave;IEEE Electron Device Letters;2024-06
3. Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches;IEEE Journal of the Electron Devices Society;2024
4. Modeling and Simulation of Fe-Doped GaN PCSS in High-Power Microwave;IEEE Transactions on Electron Devices;2023-07
5. Breakdown and Photoconductivity Enhancement by Mixed Reflective Al-Doped ZnO/Ag Electrode in Vertical SiC Photoconductive Switch;IEEE Electron Device Letters;2023-05
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