Voltage Acceleration of Oxide Breakdown in the sub-10 nm Fowler-Nordheim and Direct Tunneling Regime-Reference-Cited by-同舟云学术

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Voltage Acceleration of Oxide Breakdown in the sub-10 nm Fowler-Nordheim and Direct Tunneling Regime

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Container-title:2005 IEEE International Integrated Reliability Workshop
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Author:

Duschl R.,Vollertsen R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10702/33792/01609560.pdf?arnumber=1609560

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-thin dielectric breakdown in devices and circuits: A brief review;Microelectronics Reliability;2015-02

2. Research and Validation of ICs' TDDB Physics-of-Failure Model;Applied Mechanics and Materials;2013-03

3. Detailed Correlation of Electrical and Breakdown Characteristics to the Structural Properties of ALD Grown HfO2- and ZrO2-based Capacitor Dielectrics;ECS Transactions;2009-09-25

4. Comprehensive physics-based breakdown model for reliability assessment of oxides with thickness ranging from 1 nm up to 12 nm;2009 IEEE International Reliability Physics Symposium;2009-04

5. On Voltage Acceleration Models of Time to Breakdown—Part I: Experimental and Analysis Methodologies;IEEE Transactions on Electron Devices;2009

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