A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation-Reference-Cited by-同舟云学术

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A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation

Published:2018-11 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
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Author:

Schwandt Joern,Fretwurst Eckhart,Garutti Erika,Klanner Robert,Scharf Christian,Steinbrueck Georg

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8821248/8824226/08824412.pdf?arnumber=8824412

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment;Journal of Instrumentation;2024-05-01

2. CMOS图像传感器质子位移损伤效应实验与分析;Acta Optica Sinica;2024

3. Novel high-speed monolithic silicon detector for particle physics;Journal of Instrumentation;2023-05-01

4. Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate;Micromachines;2021-11-14

5. Electro-optical imaging of electric fields in silicon sensors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-04

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