Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Abstract

Abstract Radiation hard Double Sided Silicon Strip Detectors are used at the Silicon Tracker for the detection of two-dimensional position andenergy measurement of the incident protons in the R3B experiment at FAIR. Double Sided Silicon Strip Detectors were fabricated by Micron Semiconductor Ltd., U.K. and the first set of experimental measurements havebeenperformed on the non-irradiated detectors in order to understand the macroscopic performance of the detectors for the tracker. This study is extended to the performance of the irradiated detectors in the proton radiation environmentusing proton radiation damage model. The detectors were irradiated with 23 MeV protons up to an expected fluence of 8 × 1014 neq cm-2, which is one order higher than expected fluence at an initial phase0 of the experiment. The performance characteristics of the detectors on the full depletion voltage, leakage current, and charge collection efficiency were extrapolated using SRH and CCE modelling, which is usually implemented in device TCAD. The results on the detectors were compared with the available experimental data on the detectors. A very good comparison between experimental data and calculated resulthave been recorded for non-irradiated and irradiated detectors. The agenda is to propose a proton radiation hard Double Sided Silicon Strip Detector design on the basis of the present study for the phase 1 upgrade of the experiment.