Author:
Okihara Masao,Kasai Hiroki,Miura Noriyuki,Kuriyama Naoya,Nagatomo Yoshiki,Hatsui Takaki,Omodani Motohiko,Miyoshi Toshinobu,Arai Yasuo
Cited by
7 articles.
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1. Characterization of AC coupled SOI pixel sensor with pinned depleted diode structure;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-10
2. Contribution of Interface State and Bulk Damages to the Dark Current Increase in SOI Pixel Sensor with Pinned Depleted Diode Structure;2021 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC);2021-10-16
3. Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-04
4. Test-beam results of a SOI pixel-detector prototype;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2018-09
5. Radiation Imaging Detectors Using SOI Technology;Synthesis Lectures on Emerging Engineering Technologies;2017-02-15