Radiation-hardened MNOS RAM technology-Reference-Cited by-同舟云学术

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Radiation-hardened MNOS RAM technology

Published:1978-08 Issue:8 Volume:25 Page:1054-1060
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Marraffino P.,Newman R.,Wegener H.A.R.,Borovicka M.B.,Lewis E.T.,Lodi R.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31779/01479617.pdf?arnumber=1479617

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of charge injection and trapping in scaled SONOS/MONOS memory devices;Solid-State Electronics;1987-03

2. The monos memory transitor: Application in a radiation-hard nonvolatile RAM;Solid-State Electronics;1985-09

3. Nonvolatile Memories;Silicon Integrated Circuits;1981

4. High-Speed Nonvolatile MNOS/CMOS RAM;Japanese Journal of Applied Physics;1980-01-01

5. The gated-access MNOS memory transistor;IEEE Transactions on Electron Devices;1980-01

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